The doping concentrations in a silicon pn junction are Nd = 5 times 1015 cm-3 and Na = 5 times 1016 cm-3. The minority carrier concentration at either space charge edge is to be no larger than 10 percent of the respective majority carrier concentration. Determine the maximum forward-bias voltage that can be applied to the junction and still meet the required specifications. Is the n-region or p-region concentration the factor that limits the forward-bias voltage? Repeat part (a) if the doping concentrations are Nd = 3 times 1016 cm-3 and Na = 7 times 1015 cm-3.

A3-mm-thick panel of aluminum alloy (k 177 w/m-k, c 875 j/kg-k and ? = 2770 kg/m) is finished on both sides with an epoxy coating that must be cured at or above t,-150°c for at least 5 min. the production line for the curing operation involves two steps: (1) heating in a large oven with air at ts,0-175°c and a convection coefficient of h, 40 w/m2. k, and (2) cooling in a large chamber with air at 25°c and a con- vection coefficient of he 10 w/m2.k. the heating portion of the process is conducted over a time interval te which exceeds the ime required to reach 150°c by 5 min (h = r + 300 s). the coating has an emissivity of ? = 0.8, and the temperatures of the oven and chamber walls are 175 and 25°c, respectively. if the panel is placed in the oven at an initial temperature of 25°c and removed from the chamber at a safe-to-touch tempera ture of 37°c, what is the total elapsed time for the two-step curing operation?