Is it possible for an object to have negative distance?

How does the space charge width change with forward and reverse bias? also, calculate the space charge width for a reverse bias of 4v on a silicon pn junction at t = 300k and doping concentrations of na = 5x1015cm-3 , nd = 5x 1016 cm-3 .

Aroll in a paper machine is powered by a separately excited dc machine. operating point 1 (under load): the roll typically operates at 764 rpm and must provide 301 nm of torque to oppose the load of the paper. the armature voltage is 230v for this operating point operating point 2 (no load): when the load is removed the speed of the roll increases to 900 rpm (the field characteristics are unchanged) la ea dev m (a) calculate the maximum torque (units of nm) that the motor can supply with this applied voltage (b) calculate the value of the armature resistance, ra (in ohms) (c) at operating point 1 (loaded condition), the field current, i, and the total input power (armature field), are measured to be to be 10 a and 28,600 w respectively. use this information to calculate the value of the field resistance, rf (in ohms). (d) (d) at operating point 1 (loaded condition), calculate the motor efficiency. express your answer as a percent to at least 2 significant digits. (d) if the field voltage is reduced by 1/2, calculate the new stall torque (in nm) of the motor (f). if the field voltage is reduced by 1/2, calculate the new no-load speed (in rad/sec)

Consider the growth of a 20-nm-diameter silicon nanowire onto a silicon wafer. the temperature of the wafer surface is maintained at 2400 k. assume the thermal conductivity of the silicon nanowire is 20 wm-1k-1 and all its surfaces including the tip are subjected to convection heat transfer with the coefficient h = 1×105 wm-2k-1 and t∞ = 8000 k. when the nanowire grows to l = 300 nm, what is the temperature of the nanowire tip (t (x =