With kT/e = 0.0250V our 346 laboratory technician measured a new kind of p-type semiconductor with an electron mobility of 1000 cm^2/(V*s), and a diffusion coefficient of 25 cm^2/s. We would expect the diffusion coefficient will increase if Answers: 1. Adjusted the wafer's orientation until the diffusion coefficient increased. 2. we increased the temperature - assuming the mobility didn't decrease faster than the temperature increases. 3. we added more p-type dopants to the semiconductor. 4. put the semiconductor in a NASA rocket to get the electrons moving faster. 5. we use electrons with a smaller charge to increase the value of kT/e 6. we increase the value of k, the Boltzmann constant, to increase the value of kT/e. 7. we brought in someone else more qualified to do the measurements. 8. we decrease the temperature - assuming the mobility does not increase faster than the temperature decreases. 9. we added more n-type dopants to the semiconductor.