Physics, 27.02.2020 04:35, antoninapride
A drift current density of 120 A/cm2 is established in n-type silicon with an applied electric field of 18 V/cm. If the electron and hole mobilities are µn = 1250 cm2 /V–s and µp = 450 cm2 /V–s, respectively, determine the required doping concentration.
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