Physics, 28.11.2019 23:31, justinxvengance7249
3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm-3 and let ef-ec=0.2 ev in the n+ polysilicon. assume the oxide has a thickness of tox= 300å. also assume that (polysilicon)=(crystal silicon). (a) calculate the metal-semiconductor work function difference. (b) calculate the threshold voltage for the ideal case of zero fixed oxide charge and zero interface states
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Which material produces static charge when rubbed?
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Which quantities are scalars? choose all that apply a. distance b. speed c. acceleration d. velocity
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Which of the following statements is true about women and minorities in early psychology? a. in the early 20th century, numerous graduate schools recruited women and minorities to study psychology. b. opportunities in higher education were limited for women and minorities in the early 20th century due to discrimination. c. despite some obstacles, there were numerous employment opportunities for women and minorities. d. women and minorities were often selected to do academic research in an effort to make the field more diverse.
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3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm...
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