Physics
Physics, 28.11.2019 23:31, justinxvengance7249

3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm-3 and let ef-ec=0.2 ev in the n+ polysilicon. assume the oxide has a thickness of tox= 300å. also assume that (polysilicon)=(crystal silicon). (a) calculate the metal-semiconductor work function difference. (b) calculate the threshold voltage for the ideal case of zero fixed oxide charge and zero interface states

answer
Answers: 3

Other questions on the subject: Physics

image
Physics, 21.06.2019 14:00, Adeenieweenie
Which material produces static charge when rubbed?
Answers: 1
image
Physics, 21.06.2019 22:40, mtassy85
Um vetor representa um deslocamento cujo módulo é 20 m. se v faz um ângulo de 60 graus com a horizontal, qual é o valor das componentes horizontal e vertical deste vetor?
Answers: 2
image
Physics, 21.06.2019 23:20, funnynunny2903
Which quantities are scalars? choose all that apply a. distance b. speed c. acceleration d. velocity
Answers: 2
image
Physics, 21.06.2019 23:30, jetblackcap
Which of the following statements is true about women and minorities in early psychology? a. in the early 20th century, numerous graduate schools recruited women and minorities to study psychology. b. opportunities in higher education were limited for women and minorities in the early 20th century due to discrimination. c. despite some obstacles, there were numerous employment opportunities for women and minorities. d. women and minorities were often selected to do academic research in an effort to make the field more diverse.
Answers: 3
Do you know the correct answer?
3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm...

Questions in other subjects:

Konu
Mathematics, 06.09.2021 03:50
Konu
Mathematics, 06.09.2021 04:00
Konu
Mathematics, 06.09.2021 04:00
Konu
History, 06.09.2021 04:00