Ap-channel enhancement-mode mosfet with 50 nm thick hfo2 high-k gate dielectric (εr=25) has a threshold voltage of -0.6v. the effective hole channel mobility is 150 cm2 /v-s. what is the drive current for a 50 μm wide and 2 μm long device at vg= -3v and vd= -0.05v? what is the saturation current at this gate bias?

The average atmospheric pressure on earth is approximated as a function of altitude by the relation patm = 101.325 (1 − 0.02256z)5.256, where patm is the atmospheric pressure in kpa, and z is the altitude in km with z = 0 at sea level. determine the approximate atmospheric pressures at atlanta (z = 306 m), denver (z = 1610 m), mexico city (z = 2309 m), and the top of mount everest (z = 8848 m).