In a particular semiconductor, the fermi energy is located 0.4 ev above the intrinsic

energy with ef – ei = 0.4 ev. assume that the silicon semiconductor is at room

temperature and the intrinsic carrier concentration, ni = 1010 cm-3

. (boltzmann constant,

k = 8.617 x 10-5 ev/k.)

a. determine the conduction electron concentration.

b. determine hole concentration.

c. calculate the product of n * p.

in a particular semiconductor, the fermi energy is located 0.3 ev below the intrinsic

energy with ei – ef = 0.3 ev. assume that the silicon semiconductor is at room

temperature and the intrinsic carrier concentration, ni = 1010 cm-3

. (boltzmann constant,

k = 8.617 x 10-5 ev/k.)

a. determine the conduction electron concentration.

b. determine hole concentration.

c. calculate the product of n * p. compare to your answer in problem 8(c). is this

a coincidence? (hint: multiply the equations for n and p.)