Consider a photoresist line whose cross-sectional profile has a trapezoidal shape with a sidewall angle θ (near 90º) with respect to the wafer surface. if the resist has vertical and horizontal etch rates rv and rh, respectively, derive an expression for the rate at which the critical dimension (horizontal width) of the resist feature decreases with etch time.

technology is the collection of techniques, skills, methods, and processes used in the the merriam-webster learner's dictionary offers a definition of the term: "the use of moreover, these technologies have become so complex that entire fields more recently, modern works of science fiction such as those by philip k.

explanation:

fgravity=10x10=100n case 1

fgravity=30x20=600n case 2

6 times more

their crystal patterns have been disrupted by stress

as we probably am aware that our atmosphere or air have various levels, each level has different gasses, and each gas has another porousness. at the point when the light originates from lower porousness to higher penetrability, it alters its course. with the goal that implies that when the light originates from the moon to the earth, it alters it's course a lot more occasions. it essentially implies that the state of the light piece of the moon is changed on the earth.

not copied too! hope this !

joke:

h o h o hope you have a merry christmas!