One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of as in si is 2.5 × 1020 atoms/m3. the predisposition heat treatment is to be conducted at 1000°c for 45 minutes, with a constant surface concentration of 8 × 1026 as atoms/m3. at a drive-in temperature of 1100°c, determine the diffusion time required for a junction depth of 1.2 μm. for this system, values of qd and d0 are 4.10 ev and 2.29 × 10−3 m2/s, respectively.

answer: the metamorphic rocks are formed when they are exposed to high pressure and high temperatures. this happens when one of the earth's plates comes in contact with the other plate by traveling in opposite directions, straight into each other or slipping under one another. the friction that is caused by this activity results in   melting of rocks and when it cools they are known as metamorphic rocks. this process needs a controlled amount of pressure and temperature otherwise it may turn into magma.

explanation:

wheres the pic

use photo math tells u all the answers thats what i use