An nmos transistor is constructed by placing an n+ polysilicon gate over a p-tvpe substrate with na-101 cm and a gate oxide thickness of5nm. source and drain regions (n+) are implanted in the substrate on either side of the gate. the resulting transistor has a gate length of 0.12 μm and a gate width of 10 of 10 um a) calculate the flat-band voltage of the mos capacitor. describe what happens when the gate voltage is a little greater than the flatband voltage. (5 points) b) what is the meaning of inversion? calculate the threshold voltage of the mos ransistor if the source, drain and body of the transistor are all held at zero volts (8 points) points) saturation current of the transisto a2.2v? sketch the iv characteristic of c) calculate the width of the depletion region under the gate when v2.2v (4 d) if the surface mobility - 320cm iv. s, what will be the saturation voltage and this transistor at 2.2v annotate wherever possible. (8 points) e) what will be the high frequency and low frequency capacitance of the gate of this transistor when v.2.2v? (4 pts extra credit)