Ap-type silicon sample of doping density 10 cm3 is uniformly illuminated from one side with a light source that is absorbed in a very thin layer, generating an excess minority carrier concentration of 5x10 cm* at the illuminated surface. the surface of the semiconductor directly opposite the illuminated surface has been treated to give a very high surface recombination velocity (so high it can be taken to be infinite). the thickness, d of the silicon is 1um and the lifetime is 1us. (use the graphs provided to determine the carrier concentrations and mobilities, and take n 1.45x10 cm3.) 5) 10 a) determine an expression, n(x) for the minority carrier concentration as a function of distance, x from the illuminated surface into the sample b) if n(0) is the minority carrier concentration at the illuminated surface and n(d) is the minority carrier concentration at the high surface recombination surface, determine the percentage difference between a linear minority carrier concentration profile from x = 0 to x d and the expression determined in part a) at x = d/2. c) determine the electron current density that is flowing from the illuminated surface to the back of the silicon sample