Anumber of ms contacts are formed on si substrates maintained at t = 300k. for each of the contacts listed below, draw the energy-band diagram (indicating the schottky-barrier height , the depletion layer width w, e ef in the neutral region, and the built-in potential vi), and indicate whether the contact is ohmic or rectifying: a) an ideal contact between al (in-4. i ev) and n-type silicon with nd-1017cm', v,-0 v. b) an ideal contact between al (m-4.1ev) and p-type silicon with na10cm, va-0 v c) an ideal contact between al (ф,-41 ev) and p-type silicon with n,-1017cm-3, .5 v d) a contact between nisi and n-type silicon with nd-1017cm1-3, with v,-0 v e) a contact between nisi and p-type silicon with na- 10"cm3, with va-0 v