Physics
Physics, 22.06.2019 16:50, Jstylez1789

Consider the growth of a 20-nm-diameter silicon nanowire onto a silicon wafer. the temperature of the wafer surface is maintained at 2400 k. assume the thermal conductivity of the silicon nanowire is 20 wm-1k-1 and all its surfaces including the tip are subjected to convection heat transfer with the coefficient h = 1×105 wm-2k-1 and t∞ = 8000 k. when the nanowire grows to l = 300 nm, what is the temperature of the nanowire tip (t (x =

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Engineering, 11.07.2019 04:10, jeffcarpenter
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Physics, 13.07.2019 22:10, fanta47
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Physics, 29.07.2019 17:20, bar23cardenine01
One method that is used to grow nanowires (nanotubes with solid cores) is to initially deposit a small droplet of a liquid catalyst onto a flat surface. the surface and catalyst are heated and simultaneously exposed to a higher-temperature, low-pressure gas that contains a mixture of chemical species from which the nanowire is to be formed. the catalytic liquid slowly absorbs the species from the gas through its top surface and converts these to a solid material that is deposited onto the underlying liquid-solid interface, resulting in construction of the nanowire. the liquid catalyst remains suspended at the tip of the nanowire. consider the growth of a 15-nm-diameter silicon carbide nanowire onto a silicon carbide surface. the surface is maintained at a temperature of ts 2400 k, and the particular liquid catalyst that is used must be maintained in the range 2400 k tc 3000 k to perform its function. determine the maximum length of a cover plate evacuated space absorber plate water tw insulation l t q"rad nanowire that may be grown for conditions characterized by h 105 w/m2 k and t 8000 k. assume properties of the nanowire are the same as for bulk silicon carbide.
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