Engineering
Engineering, 05.07.2021 19:30, edwin67

Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential ϕi​=1.20V. acceptor density in the p-side = 5.68x10^16
donor density in the n-side = 1.42x10^16
Determine the depletion region width, xn​, in the n-side in unit of μm.

answer
Answers: 3

Other questions on the subject: Engineering

image
Engineering, 04.07.2019 18:10, lerasteidl
Determine whether or not it is possible to compress air adiabatically from k to 140 kpa and 400 k. what is the entropy change during this process?
Answers: 3
image
Engineering, 04.07.2019 18:10, siri5645
At 12 noon, the count in a bacteria culture was 400; at 4: 00 pm the count was 1200 let p(t) denote the bacteria cou population growth law. find: (a) an expression for the bacteria count at any time t (b) the bacteria count at 10 am. (c) the time required for the bacteria count to reach 1800.
Answers: 1
image
Engineering, 04.07.2019 18:10, namira16
Which of the following controllers anticipates the future from the slope of errors over time? a)-proportional b)-on/off c)-integral d)-derivative.
Answers: 2
image
Engineering, 04.07.2019 19:10, nbunny7208
What is the chief metrological difference between measuring with a microscope and with an electronic comparator? a. the microscope is limited to small workpieces. a. the microscope is limited to small workpieces. c. the comparator can only examine one point on the workpiece. d. the microscope carries its own standard.
Answers: 1
Do you know the correct answer?
Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion...

Questions in other subjects:

Konu
History, 07.01.2021 23:20
Konu
Geography, 07.01.2021 23:20
Konu
Mathematics, 07.01.2021 23:20
Konu
Mathematics, 07.01.2021 23:20