Engineering, 05.07.2021 19:30, edwin67
Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential ϕi=1.20V.
acceptor density in the p-side = 5.68x10^16
donor density in the n-side = 1.42x10^16
Determine the depletion region width, xn, in the n-side in unit of μm.
Answers: 3
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Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion...
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