Engineering, 27.08.2020 21:01, jona187

An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x 101 μη-I 000 cmr/(V. sec ) Фт.--0.925 eV, Gate oxide thickness tox-d= 3.0x10-6 cm Dimensions: L = 0.5x10-4 cm, Z = 1 x 104 cm Oxide Charges: Qs = 4.8x 10-8 Coul/cm, Qm= Q,-Qu = 0, Assume -9.65x10 cm3,T-300 K and KT-0.0259 eV cm

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An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x 101 μη-I 000 cmr/(V....