Engineering, 24.04.2020 20:37, milkshakegrande101
(a) Consider a germanium semiconductor at T 300 K. Calculate the thermal equilibrium electron and hole concentrations for (i) Nd 2 1015 cm3, Na 0, and (ii) Na 1016 cm3, Nd 7 1015 cm3. (b) Repeat part (a) for GaAs. (c) For the case of GaAs in part (b), the minority carrier concentrations are on the order of 103 cm3. What does this result mean physically
Answers: 1
Engineering, 03.07.2019 14:10, cowgyrlup124
Explain the difference laminar and turbulent flow. explain it with the shear stress and the velocity profiles.
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Engineering, 04.07.2019 18:10, juansoto227711
Journeyman training is usually related (clo2) a)-to specific tasks b)-to cost analysis of maintenance task c)-to control process to ensure quality d)-to installation of machinery
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Engineering, 04.07.2019 18:10, QueenLife4869
Awall of 0.5m thickness is to be constructed from a material which has average thermal conductivity of 1.4 w/mk. the wall is to be insulated with a material having an average thermal conductivity of 0.35 w/mk so that heat loss per square meter shall not exceed 1450 w. assume inner wall surface temperature of 1200°c and outer surface temperature of the insulation to be 15°c. calculate the thickness of insulation required.
Answers: 3
(a) Consider a germanium semiconductor at T 300 K. Calculate the thermal equilibrium electron and ho...
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