Engineering
Engineering, 17.04.2020 04:39, mprjug6

A Si wafer of diameter D is placed at a height H above a small planar evaporation source. The evaporation flux is proportional to cos q where q is the angle the flux makes with the normal to the plane source. Derive an expression for the ratio of the deposited film thickness at the center of wafer to the deposited film thickness at the edge of the wafer in terms of D and H.

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A Si wafer of diameter D is placed at a height H above a small planar evaporation source. The evapor...

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