An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V, and substrate doping of 1018 cm-3. The intrinsic carrier concentration is 1011 cm-3, effective electron channel mobility is 250 cm2/V­s, and Pr = 15. What is the drive current for a 50 om wide and 2 om long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?

Explain the difference laminar and turbulent flow. explain it with the shear stress and the velocity profiles.

Steel is coated with a thin layer of ceramic to protect against corrosion. what do you expect to happen to the coating when the temperature of the steel is increased significantly? explain.

Apump is used to circulate hot water in a home heating system. water enters the well-insulated pump operating at steady state at a rate of 0.42 gal/min. the inlet pressure and temperature are 14.7 lbf/in.2, and 180°f, respectively; at the exit the pressure is 60 lbf/in.2 the pump requires 1/15 hp of power input. water can be modeled as an incompressible substance with constant density of 60.58 lb/ft3 and constant specific heat of 1 btu/lb or. neglecting kinetic and potential energy effects, determine the temperature change, in °r, as the water flows through the pump.