Consider the design of a CMOS gate computing F = � ∙ � ∙ � ∙ � a) Sketch a transistor-level schematic for this gate. (5 points) b) Annotate the sketch with transistor widths chosen to achieve effective rise and fall resistance equal to a unit (2/1) inverter. (5 points) c) Estimate the rise and fall propagation delays in terms of R and C of this gate driving h identical gates. Explain the relative transition times and values of the inputs to achieve these delays. (10 points) d) Estimate the best-case (contamination) delays of the gate. Explain the relative transition times and values of the inputs to achieve these delays. (10 points)

the design is as follows

Explanation:

The output expression is written like this:

X = (A+ B)(C+D + E)+F)G ≡ ((AB + CDEF)) + G

This allows the building down of the pulldown network by the inspection of the terms.

Thus, the parallel network allows the parallel devices implementation and the series circuit to implement the AND logic gates.

In addition, the pullup network is the dua of the pulldown network as revealed in the circuit.

In the plot, the worst case scenario will be when the output resistance matches the output resistance when the inventor is connected to it.

explanation:

i don't understand really? can u provide more information

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answer: 500 wph.

explanation: