Engineering, 12.03.2020 02:25, pthalia

Two identical (100), bare Si wafers were subjected to thermal oxidation at 950 oC for 40 minutes (A) one in dry oxygen and (B) another in wet oxidizing ambient. Calculate oxide thickness in these two cases and then explain the difference in the case calculated thicknesses would not be the same.

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Two identical (100), bare Si wafers were subjected to thermal oxidation at 950 oC for 40 minutes (A)...