Engineering
Engineering, 07.03.2020 05:18, kprincess16r

A 1.5 micrometer Aluminum film is deposited over a flat field oxide region and patterned with photoresist. The Aluminum is then etched. The selectivity of Al over photoresist is 5. Assuming a 10% over etch, what is the initial photoresist thickness required to ensure that the final photoresist thickness is 100 nm

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