Engineering, 06.03.2020 22:00, brittsterrr
An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The doping concentrations are NE 1018 cm3 , NB 1017 cm3 , and NC 1016 cm3 . Other parameters are xB 1 m, E0 B0 C0 2 107 s, DE 10 cm2 /s, DB 20 cm2 /s, DC 15 cm2 /s, and A 103 cm2 . (a) Calculate and plot the minority carrier distribution in the device. (b) Calculate the collector and emitter currents. (Neglect geometry factors and assume the recombination factor is unity.)
Answers: 2
Other questions on the subject: Engineering
Engineering, 03.07.2019 15:10, EmilySerna
Heat is added to a piston-cylinder device filled with 2 kg of air to raise its temperature 400 c from an initial temperature of t1 27 cand pressure of pi 1 mpa. the process is isobaric process. find a)-the final pressure p2 b)-the heat transfer to the air.
Answers: 1
Engineering, 04.07.2019 18:10, tjeffers90028
Refrigerant 134a enters an insulated compressor operating at steady state as saturated vapor at -26°c with a volumetric flow rate of 0.18 m3/s. refrigerant exits at 9 bar, 70°c. changes in kinetic and potential energy from inlet to exit can be ignored. determine the volumetric flow rate at the exit, in m3/s, and the compressor power, in kw.
Answers: 1
Engineering, 04.07.2019 18:10, anna22684
Water at 70°f and streams enter the mixing chamber at the same mass flow rate, determine the temperature and the quality of the exiting stream. 0 psia is heated in a chamber by mixing it with saturated water vapor at 20 psia. if both streams enters the mixing chamber at the same mass flow rate, determine the temperature and the quality of the existing system.
Answers: 2
Do you know the correct answer?
An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The dopin...
Questions in other subjects:
Social Studies, 05.05.2020 07:03
History, 05.05.2020 07:03
Chemistry, 05.05.2020 07:03
History, 05.05.2020 07:03
