For a 0.18-μm CMOS fabrication process:
Vtn = 0.5 V, Vtp = –0.5 V, μnCox = 400 μA/V2, μp...
Engineering, 20.02.2020 23:54, LucidDreamer16
For a 0.18-μm CMOS fabrication process:
Vtn = 0.5 V, Vtp = –0.5 V, μnCox = 400 μA/V2, μpCox = 100 μA/V2, C = 8.6 fF/μm2 , V (n-channel devices) = 5L (μm), and VA (p-channel devices) = 6L (μm).
Find the small-signal model parameters(ro and gm) for both an NMOS and a PMOS transistor having W/L = 10 μm/0.5 μm and operating at ID = 100 μA. Also, find the overdrive voltage at which each device must be operating.
Answers: 1
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