Engineering
Engineering, 11.02.2020 23:15, ehaynie

Calculate tunneling probability through 1 nm SiO2 gate insulator and 3 nm HfO2 gate insulator of an field-effect transistor. Energy barriers of penetration of electron through and are 8 and 6 eV respectively. Calculate tunneling leakage current through the gates of an area of 0.1 mm2 .

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