Engineering, 13.12.2019 02:31, yolo123321

For a silicon nonvolatile memory with a floating gate, the thickness and the dielectric constant for the first insulator (thermally grown so,) are 3 nm and 3.9, and the corresponding values for the second insulator are 30 nm and 30.
1. estimate the stored charge/cm^2 in the floating gate after a gate voltage of 5.52 v is applied for 1 ms. there is no current conduction through the second insulator, and the current in the first insulator is by fowler-nordheim tunneling.

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For a silicon nonvolatile memory with a floating gate, the thickness and the dielectric constant for...