Engineering, 08.11.2019 02:31, montanolumpuy
Aluminum diffuses readily into silicon. for transistors with shallow source-drain regions, annealing frequently causes aluminum to diffuse through the source-drain region and short to the substrate. this problem, called "junction spiking," can be combated through the use of a thin titanium-tungsten (tiw) barrier between the aluminum and silicon. how might such a barrier affect device performance? (hint: read the section on contact resistance in the device analysis lab.)
Answers: 1
Engineering, 04.07.2019 18:10, lillygrl100
For the closed feedwater heater below, feedwater enters state 3 at a pressure of 2000 psia and temperature of 420 °f at a rate of ix10 ibhr. the feedwat extracted steam enters state 1 at a pressure of 1000 psia and enthalpy of 1500 btu/lbm. the extracted er leaves at an enthalpy of 528.7 btu/lbm steam leaves as a saturated liquid. (16) a) determine the mass flow rate of the extraction steam used to heat the feedwater (10) b) determine the terminal temperature difference of the closed feedwater heater
Answers: 3
Engineering, 04.07.2019 18:10, redrosesxx
Water at 55c flows across a flat plate whose surface temperature is held constant at 95c. if the temperature gradient at the plate's surface for a given value of x is 18 c/mm, find a) local heat transfer coefficient. b) heat flux
Answers: 3
Engineering, 04.07.2019 18:10, Tyrant4life
Draw the engineering stress-strain curve for (a) bcc; (b) fcc metals and mark important points.
Answers: 1
Aluminum diffuses readily into silicon. for transistors with shallow source-drain regions, annealing...
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