Engineering, 06.11.2019 19:31, Jasten
Consider a silicon p-n step junction (or abrupt junction) at room temperature. if the doping concentrations are na = 10^17 cm^-3 and nd = 10^14 cm^-3 , what is the depletion width (also known as space charge width)? also find the maximum electric field (e0). then derive the expression for the electric field e(x), and the potential field v(x). do not use limits of integration. to find the constant of integration, use boundary conditions such as "e=e0 at x=0". once you get expressions for e(x), you can use that for v(x). use boundary conditions, "at x=-xp0, v(x)=0, and at x=xn0, v(x)=v0".
Answers: 1
Engineering, 03.07.2019 14:10, makaylashrout77
Amass of 1.5 kg of air at 120 kpa and 24°c is contained in a gas-tight, frictionless piston-cylinder device. the air is now compressed to a final pressure of 720 kpa. during the process, heat is transferred from the air such that the temperature inside the cylinder remains constant. calculate the boundary work input during this process.
Answers: 2
Engineering, 04.07.2019 08:10, doggo242
Which of the following is an easy way to remember the modified “x” tire rotation? a. nondrive wheels straight, cross the drive wheels b. drive wheels straight, cross the nondrive wheels c. drive wheels crossed, nondrive wheels straight d. drive wheels crossed, nondrive wheels crossed
Answers: 1
Engineering, 04.07.2019 18:10, Larkinlover703
Items are similar to the free issue items, but their access is limited. (clo5) a)-bin stock items free issue b)-bin stock controlled issue c)-critical or insurance spares d)-rebuildable spares e)-consumables
Answers: 1
Consider a silicon p-n step junction (or abrupt junction) at room temperature. if the doping concent...
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