Engineering
Engineering, 19.10.2019 04:10, therronvictorjr

For the predeposition heat treatment of a semiconducting device, gallium atoms are to be diffused into silicon at a temperature of 1150°c for 2.5 h. if the required concentration of ga at a position 2 μm below the surface is 8 x 10^23 atoms/m^3, compute the required surface concentration of ga. assume the following: (i) the surface concentration remains constant (ii) the background concentration is 2 x 10^19 ga atoms/m^3 (iii) preexponential and activation energy values are 3.74 x 10^-5 m^2/s and 3.39 ev/atom, respectively. express your answer in atoms/m3 to three significant figures.

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For the predeposition heat treatment of a semiconducting device, gallium atoms are to be diffused in...

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