Engineering, 12.10.2019 02:30, theojw

In a step p-n junction (area=0.01 cm 2 ), the n-side doping is 5 times of p-side doping. the intrinsic carrier concentration is ni = 109 cm-3 , bandgap is 1.5 ev, and relative dielectric constant is 10.

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In a step p-n junction (area=0.01 cm 2 ), the n-side doping is 5 times of p-side doping. the intrins...