Answers: 1
Chemistry, 21.06.2019 16:00, saby30
Silica, sio2, is formed on silicon as an electrically insulating layer for microelectronic devices. silica is formed when silicon is exposed to o2 gas at an elevated temperature. at 900˚c, it takes 90 minutes for the oxygen to diffuse from the surface to form a 0.06 micron (0.06 x 10-6 m) thick layer of sio2 on
Answers: 1
Chemistry, 22.06.2019 12:30, nekathadon
The bond energy for the van der waals bond between two helium atoms is 7.9×10−4ev. assuming that the average kinetic energy of a helium atom is (3/2)kbt, at what temperature is the average kinetic energy equal to the bond energy between two helium atoms
Answers: 1
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