Amos device requires a gate oxide of 10 ± 0.5 nm. assume the growth is done at 900˚c in dry o2. neglect any effect of the anomalous initial growth. derive a simple expression, which gives the sensitivity of the oxide thickness tox to growth temperature t, i. e. dtox/dt. evaluate this expression to see how well controlled the furnace temperature must be in order to obtain 10 nm ± 0.5 nm at 900˚c.

the formula for the conversion of temperature from degree celsius to kelvin is:

the sample of water at is converted to kelvin temperature by using the above formula as:

on comparing the two samples of water at or we can say that at and at respectively. the difference between the temperatures of two samples of water is:

hence, one can say that the sample of water at is greater than the sample of water at by .